FQP8N60C Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 7.5A (Tc) 147W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP8N60C
Manufacturer Part #: FQP8N60C
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Not For New Designs
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQP8
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 1.2Ohm @ 3.75A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
Parts With Similar Specs The following parts have similar specifications to integrated device technology
This Part
FQP8N60C
Authorized Distributors:8
Case/Package:TO-220AB
Continuous Drain Current (ID):7.5 A
Drain to Source Voltage (Vdss):600 V
Gate to Source Voltage (Vgs):30 V
Input Capacitance:1.255 nF
Mount:Through Hole
Power Dissipation:147 W
Price @ 1,000:USD 0.714
Rds On Max:1.2 Ω
Threshold Voltage:4 V

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