FQP50N06L Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP50N06L
Manufacturer Part #: FQP50N06L
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Active
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Base Product Number: FQP5
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 5V 10V
  • Rds On (Max) @ Id Vgs: 21mOhm @ 26.2A 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 121W (Tc)
  • Drain to Source Voltage (Vdss): 60V
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
Functional compatible component(2) Form,Package,Functional compatible component(2)
Mfr. Part # Mfr. Description Compare
ON Semiconductor Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220, 1000-TUBE FQP50N06L vs FQP50N06L
Fairchild Semicond Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide FQP50N06L vs FQP50N06LJ69Z
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