FQP4N20 Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 200V 3.6A (Tc) 45W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP4N20
Manufacturer Part #: FQP4N20
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQP4
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 1.4Ohm @ 1.8A 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Drain to Source Voltage (Vdss): 200V
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Functional compatible component(3) Form,Package,Functional compatible component(1)
Mfr. Part # Mfr. Description Compare
IRL610
Transistors
Samsung Semiconduc Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQP4N20 vs IRL610
IRL610A
Transistors
Fairchild Semicond Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQP4N20 vs IRL610A
FQP4N20L
Transistors
ON Semiconductor Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220, 1000-TUBE FQP4N20 vs FQP4N20L
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