FQP2N60C Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 2A (Tc) 54W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP2N60C
Manufacturer Part #: FQP2N60C
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Active
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQP2
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 4.7Ohm @ 1A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Functional compatible component(2) Form,Package,Functional compatible component(2)
Mfr. Part # Mfr. Description Compare
Fairchild Semicond N-Channel QFET® MOSFET 600V, 2A, 4.7Ω, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 1000/RAIL FQP2N60C vs FQP2N60C
Rochester Electron 2.4A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN FQP2N60C vs FQP2N60
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