FQP13N50C Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 500V 13A (Tc) 195W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP13N50C
Manufacturer Part #: FQP13N50C
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Not For New Designs
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQP1
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 480mOhm @ 6.5A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Drain to Source Voltage (Vdss): 500V
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 25V
Functional compatible component(1) Form,Package,Functional compatible component(1)
Mfr. Part # Mfr. Description Compare
ON Semiconductor Power Field-Effect Transistor, 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T FQP13N50C vs FQP13N50C-F105
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