FQP12N60 Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 10.5A (Tc) 180W (Tc) Through Hole TO-220-3DataSheet
Details Information
Aisa Part#: A150-FQP12N60
Manufacturer Part #: FQP12N60
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-220-3
CAD Model:
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQP1
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 700mOhm @ 5.3A 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Functional compatible component(3) Form,Package,Functional compatible component(3)
Mfr. Part # Mfr. Description Compare
FQA12N60
Transistors
Fairchild Semicond Power Field-Effect Transistor, 12A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se FQP12N60 vs FQA12N60
FQP12N60
Transistors
Fairchild Semicond Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide FQP12N60 vs FQP12N60
FQP12N60C
Transistors
Fairchild Semicond Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQP12N60 vs FQP12N60C
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