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FQNL1N50BBU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 500V 270mA (Tc) 1.5W (Tc) Through Hole TO-92-3DataSheet
Details Information
Aisa Part#: A150-FQNL1N50BBU
Manufacturer Part #: FQNL1N50BBU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-226-3, TO-92-3 Long Body (Formed Leads)
CAD Model:
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Bulk
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQNL1
  • Package / Case: TO-226-3 TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 9Ohm @ 135mA 10V
  • Vgs(th) (Max) @ Id: 3．7V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1．5W (Tc)
  • Drain to Source Voltage (Vdss): 500V
  • Gate Charge (Qg) (Max) @ Vgs: 5．5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
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