FQN1N60CBU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3DataSheet
Details Information
Aisa Part#: A150-FQN1N60CBU
Manufacturer Part #: FQN1N60CBU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-226-3, TO-92-3 (TO-226AA)
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Bulk
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQN1
  • Package / Case: TO-226-3 TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 11.5Ohm @ 150mA 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta) 3W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
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  • Tel:00852-81912383
  • Email:sales@asiacomponents.net
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