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FQI9N50CTU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 500V 9A (Tc) 135W (Tc) Through Hole I2PAK (TO-262)DataSheet
Details Information
Aisa Part#: A150-FQI9N50CTU
Manufacturer Part #: FQI9N50CTU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
CAD Model:
AltiumEagleOrCadPADSKiCad
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQI9
  • Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 800mOhm @ 4．5A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Drain to Source Voltage (Vdss): 500V
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
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