FQI7P06TU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleP-Channel 60V 7A (Tc) 3.75W (Ta), 45W (Tc) Through Hole I2PAK (TO-262)DataSheet
Details Information
Aisa Part#: A150-FQI7P06TU
Manufacturer Part #: FQI7P06TU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
CAD Model:
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Base Product Number: FQI7
  • Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 410mOhm @ 3.5A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta) 45W (Tc)
  • Drain to Source Voltage (Vdss): 60V
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
Parts With Similar Specs The following parts have similar specifications to integrated device technology
This Part
FQI7P06TU
Authorized Distributors:2
Case/Package:TO-262-3
Continuous Drain Current (ID):7 A
Drain to Source Voltage (Vdss):60 V
Gate to Source Voltage (Vgs):25 V
Input Capacitance:295 pF
Mount:Through Hole
Power Dissipation:3.75 W
Price @ 1,000:USD 0.401
Rds On Max:410 mΩ

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  • Email:sales@asiacomponents.net
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