FQI7N60TU- Datesheet PDF - Discrete Semiconductor Products-Transistors - FETs, MOSFETs - Single - ON Semiconductor

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FQI7N60TU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)DataSheet

Details Information

Aisa Part#: A150-FQI7N60TU

Manufacturer Part #: FQI7N60TU

Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single

Manufacturer: ON Semiconductor

Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA

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Specifications

Mfr: ON Semiconductor
Series: QFET®
Package: Bulk
Package: Tube
Part Status: Active
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Base Product Number: FQI7
Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
Supplier Device Package: I2PAK (TO-262)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7．4A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 1Ohm @ 3．7A 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3．13W (Ta) 142W (Tc)
Drain to Source Voltage (Vdss): 600V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Input Capacitance (Ciss) (Max) @ Vds: 1．43pF @ 25V

Functional compatible component(10)

Mfr. Part #	Mfr.	Description	Compare
SSI10N60BTU Transistors	Fairchild Semicond	Power Field-Effect Transistor， 9A I(D)， 600V， 0.8ohm， 1-Element， N-Channel， Silicon， Metal-oxide Sem	FQI7N60TU vs SSI10N60BTU
2SK2908-01L Transistors	Fuji Electric Co L	Power Field-Effect Transistor， 9A I(D)， 600V， 1.2ohm， 1-Element， N-Channel， Silicon， Metal-oxide Sem	FQI7N60TU vs 2SK2908-01L
IRFSL9N60APBF Transistors	Vishay Intertechno	Power Field-Effect Transistor， 9.2A I(D)， 600V， 0.75ohm， 1-Element， N-Channel， Silicon， Metal-oxide	FQI7N60TU vs IRFSL9N60APBF
IRFSL11N50APBF Transistors	Vishay Siliconix	Power Field-Effect Transistor， 11A I(D)， 500V， 0.55ohm， 1-Element， N-Channel， Silicon， Metal-oxide S	FQI7N60TU vs IRFSL11N50APBF
IRFSL9N60ATRL Transistors	International Rect	Power Field-Effect Transistor， 9.2A I(D)， 600V， 0.75ohm， 1-Element， N-Channel， Silicon， Metal-oxide	FQI7N60TU vs IRFSL9N60ATRL
FQI6N60 Transistors	Fairchild Semicond	Power Field-Effect Transistor， 6.2A I(D)， 600V， 1.5ohm， 1-Element， N-Channel， Silicon， Metal-oxide S	FQI7N60TU vs FQI6N60
IRFBC30LPBF Transistors	International Rect	Power Field-Effect Transistor， 3.6A I(D)， 600V， 2.2ohm， 1-Element， N-Channel， Silicon， Metal-oxide S	FQI7N60TU vs IRFBC30LPBF
IRF840LCL Transistors	International Rect	Power Field-Effect Transistor， 8A I(D)， 500V， 0.85ohm， 1-Element， N-Channel， Silicon， Metal-oxide Se	FQI7N60TU vs IRF840LCL
SSI7N60B Transistors	Fairchild Semicond	Power Field-Effect Transistor， 7A I(D)， 600V， 1.2ohm， 1-Element， N-Channel， Silicon， Metal-oxide Sem	FQI7N60TU vs SSI7N60B
FMI05N60E Transistors	Fuji Electric Co L	Power Field-Effect Transistor， 5.5A I(D)， 600V， 1.3ohm， 1-Element， N-Channel， Silicon， Metal-oxide S	FQI7N60TU vs FMI05N60E

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