FQI7N60TU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)DataSheet
Details Information
Aisa Part#: A150-FQI7N60TU
Manufacturer Part #: FQI7N60TU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Bulk
  • Package: Tube
  • Part Status: Active
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQI7
  • Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 1Ohm @ 3.7A 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta) 142W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1.43pF @ 25V
Functional compatible component(10)
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International Rect Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQI7N60TU vs IRFBC30LPBF
IRF840LCL
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International Rect Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se FQI7N60TU vs IRF840LCL
SSI7N60B
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FMI05N60E
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Fuji Electric Co L Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQI7N60TU vs FMI05N60E
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