FQI4N80TU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole I2PAK (TO-262)DataSheet
Details Information
Aisa Part#: A150-FQI4N80TU
Manufacturer Part #: FQI4N80TU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
CAD Model:
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  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Active
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQI4
  • Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 3.6Ohm @ 1.95A 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta) 130W (Tc)
  • Drain to Source Voltage (Vdss): 800V
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Functional compatible component(2) Form,Package,Functional compatible component(2)
Mfr. Part # Mfr. Description Compare
ON Semiconductor Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK, 1000-TUBE FQI4N80TU vs FQI4N80TU
Fairchild Semicond Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide S FQI4N80TU vs FQI4N80
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