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FQI12N60TU Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleN-Channel 600V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole I2PAK (TO-262)DataSheet
Details Information
Aisa Part#: A150-FQI12N60TU
Manufacturer Part #: FQI12N60TU
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
CAD Model:
AltiumEagleOrCadPADSKiCad
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tube
  • Part Status: Obsolete
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQI1
  • Package / Case: TO-262-3 Long Leads I²Pak TO-262AA
  • Supplier Device Package: I2PAK (TO-262)
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 10．5A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 700mOhm @ 5．3A 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3．13W (Ta) 180W (Tc)
  • Drain to Source Voltage (Vdss): 600V
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
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