FQD7P06TM Discrete Semiconductor Products,Transistors - FETs, MOSFETs - SingleP-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-PakDataSheet
Details Information
Aisa Part#: A150-FQD7P06TM
Manufacturer Part #: FQD7P06TM
Product Category: Discrete Semiconductor Products,Transistors - FETs, MOSFETs - Single
Manufacturer: ON Semiconductor
Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
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Specifications
  • Mfr: ON Semiconductor
  • Series: QFET®
  • Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status: Active
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Base Product Number: FQD7
  • Package / Case: TO-252-3 DPak (2 Leads + Tab) SC-63
  • Supplier Device Package: D-Pak
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On Min Rds On): 10V
  • Rds On (Max) @ Id Vgs: 451mOhm @ 2.7A 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta) 28W (Tc)
  • Drain to Source Voltage (Vdss): 60V
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
Functional compatible component(10) Form,Package,Functional compatible component(2)
Mfr. Part # Mfr. Description Compare
SFR9014
Transistors
Fairchild Semicond Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se FQD7P06TM vs SFR9014
SPD08P06P
Transistors
Siemens Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se FQD7P06TM vs SPD08P06P
SPD08P05
Transistors
Infineon Technolog Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semi FQD7P06TM vs SPD08P05
SSR2955
Transistors
Samsung Semiconduc Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Sem FQD7P06TM vs SSR2955
STD10PF06T4
Transistors
STMicroelectronics P-Channel 60V - 0.18 Ohm - 10A STripFET(TM) II POWER MOSFET FQD7P06TM vs STD10PF06T4
SFW2955
Transistors
Samsung Semiconduc Power Field-Effect Transistor, 9.4A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se FQD7P06TM vs SFW2955
SFR9024TM
Transistors
Rochester Electron 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD7P06TM vs SFR9024TM
SFW9Z34
Transistors
Fairchild Semicond Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se FQD7P06TM vs SFW9Z34
FQD7P06
Transistors
ON Semiconductor Power Field-Effect Transistor FQD7P06TM vs FQD7P06
STB16PF06LT4
Transistors
STMicroelectronics 16A, 60V, 0.165ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 FQD7P06TM vs STB16PF06LT4
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  • Email:sales@asiacomponents.net
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